JPS634334B2 - - Google Patents
Info
- Publication number
- JPS634334B2 JPS634334B2 JP55073060A JP7306080A JPS634334B2 JP S634334 B2 JPS634334 B2 JP S634334B2 JP 55073060 A JP55073060 A JP 55073060A JP 7306080 A JP7306080 A JP 7306080A JP S634334 B2 JPS634334 B2 JP S634334B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- group
- semiconductor particles
- type semiconductor
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000004220 aggregation Methods 0.000 claims description 5
- 230000002776 aggregation Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052788 barium Inorganic materials 0.000 claims 3
- 229910052791 calcium Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 239000011572 manganese Substances 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 3
- 229910052712 strontium Inorganic materials 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- -1 In addition Chemical compound 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7306080A JPS56169316A (en) | 1980-05-30 | 1980-05-30 | Composition functional element and method of producing same |
| US06/265,707 US4475091A (en) | 1980-05-30 | 1981-05-21 | Composite function element and process for producing the same |
| DE8181302383T DE3175257D1 (en) | 1980-05-30 | 1981-05-29 | Composite function element and process for producing same |
| EP81302383A EP0041379B1 (en) | 1980-05-30 | 1981-05-29 | Composite function element and process for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7306080A JPS56169316A (en) | 1980-05-30 | 1980-05-30 | Composition functional element and method of producing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169316A JPS56169316A (en) | 1981-12-26 |
| JPS634334B2 true JPS634334B2 (en]) | 1988-01-28 |
Family
ID=13507425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7306080A Granted JPS56169316A (en) | 1980-05-30 | 1980-05-30 | Composition functional element and method of producing same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4475091A (en]) |
| EP (1) | EP0041379B1 (en]) |
| JP (1) | JPS56169316A (en]) |
| DE (1) | DE3175257D1 (en]) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735303A (en) * | 1980-07-30 | 1982-02-25 | Taiyo Yuden Kk | Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same |
| DE3121289A1 (de) * | 1981-05-29 | 1982-12-23 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Spannungsabhaengiger widerstand und verfahren zu seiner herstellung |
| DE3121290A1 (de) * | 1981-05-29 | 1983-01-05 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "nichtlinearer widerstand und verfahren zu seiner herstellung" |
| US4808398A (en) * | 1985-02-14 | 1989-02-28 | The Dow Chemical Company | Narrow size distribution zinc oxide |
| JPS6243111A (ja) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | バリスタ用磁器組成物 |
| JPH01283049A (ja) * | 1988-05-10 | 1989-11-14 | Oki Electric Ind Co Ltd | パルスモータ |
| JP2671928B2 (ja) * | 1988-08-11 | 1997-11-05 | 株式会社村田製作所 | 複合機能素子 |
| JP2633330B2 (ja) * | 1988-10-17 | 1997-07-23 | 株式会社村田製作所 | 複合機能素子の製造方法 |
| JP2663300B2 (ja) * | 1989-07-07 | 1997-10-15 | 株式会社村田製作所 | ノイズフイルタ |
| US5721043A (en) * | 1992-05-29 | 1998-02-24 | Texas Instruments Incorporated | Method of forming improved thin film dielectrics by Pb doping |
| DE59406312D1 (de) * | 1993-10-15 | 1998-07-30 | Abb Research Ltd | Verbundwerkstoff |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB638834A (en) * | 1947-10-17 | 1950-06-14 | Nat Lead Co | Improvements relating to ceramic dielectric materials and methods of manufacturing the same |
| US3299332A (en) * | 1961-07-10 | 1967-01-17 | Murata Manufacturing Co | Semiconductive capacitor and the method of manufacturing the same |
| NL301822A (en]) * | 1963-12-13 | |||
| DE1646987C3 (de) * | 1965-03-19 | 1974-01-17 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Verfahren zum Herstellen polykristalliner scheiben-, stabrohr- oder folienförmiger keramischer Kaltleiter-, bzw. Dielektrikums- bzw. Heißleiterkörper |
| DE1646988B2 (de) * | 1965-03-19 | 1973-06-14 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen polykristalliner scheiben-, stabrohr- oder folienfoermiger keramischer kaltleiter- bzw. dielektrikums- bzw. heissleiterkoerper |
| FR1584171A (en]) * | 1968-08-27 | 1969-12-12 | ||
| US3933668A (en) * | 1973-07-16 | 1976-01-20 | Sony Corporation | Intergranular insulation type polycrystalline ceramic semiconductive composition |
| US4131903A (en) * | 1976-08-03 | 1978-12-26 | Siemens Aktiengesellschaft | Capacitor dielectric with inner blocking layers and method for producing the same |
| GB1556638A (en) * | 1977-02-09 | 1979-11-28 | Matsushita Electric Ind Co Ltd | Method for manufacturing a ceramic electronic component |
| DE3019969A1 (de) * | 1980-05-24 | 1981-12-03 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Spannungsabhaengiger widerstand und verfahren zu seiner herstellung |
-
1980
- 1980-05-30 JP JP7306080A patent/JPS56169316A/ja active Granted
-
1981
- 1981-05-21 US US06/265,707 patent/US4475091A/en not_active Expired - Lifetime
- 1981-05-29 EP EP81302383A patent/EP0041379B1/en not_active Expired
- 1981-05-29 DE DE8181302383T patent/DE3175257D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0041379A2 (en) | 1981-12-09 |
| EP0041379B1 (en) | 1986-09-03 |
| EP0041379A3 (en) | 1983-04-20 |
| JPS56169316A (en) | 1981-12-26 |
| US4475091A (en) | 1984-10-02 |
| DE3175257D1 (en) | 1986-10-09 |
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